Tin and/or lead contacts to P-type HgCdTe

ABSTRACT

An adhesive ohmic contact made to a p-type semiconductor metal substrate or layer (10) comprises tin. The contact preferably includes a tin film (24) approximately 2000 Å in thickness. The p-type semiconductor compound contains mercury and, while described in conjunction with Hg 1-x  Cd x  Te, other elements exhibiting group II and group VI chemical behavior and properties may be used. A cap layer (30) is deposited over film (24), followed by insulating layer 32. Via (34) is then formed and, to complete contact (50), a metal (36) is deposited inside via (34).

This is a division, of application Ser. No. 07/813,249, filed Dec. 23,1991, now U.S. Pat. No. 5,229,324.

TECHNICAL FIELD OF THE INVENTION

The present invention relates to electronic semiconductor devices, andmore particularly, to an adhesive ohmic contact used in conjunction witha p-type semiconductor material containing mercury.

BACKGROUND OF THE INVENTION

In order to effectively build circuits on p-type Hg_(1-x) Cd_(x) Te,electrical contacts to the substrate must be established. Ohmic contactsto p-type Hg_(1-x) Cd_(x) Te have proven difficult because most commoncontacting processes either convert the semiconductor to n-type, therebycreating a p-n junction diode in the p-type material or result in aSchottky diode. Ohmic contacts to p-type Hg_(1-x) Cd_(x) Te havetypically been made by the deposition of gold using either electrolessplating in a gold solution or by thermal evaporation. These contactsprove less than durable. Attempts have also been made to use copper,platinum, germanium, aluminum, titanium, HgTe and small-bandgap Hg_(1-x)Cd_(x) Te.

While contacts using gold as the contact metal (particularly electrolessgold) can be ohmic and of low resistance, they suffer from amechanically weak gold to Hg_(1-x) Cd_(x) Te interface, which causespoor adhesion of gold film. These films often delaminate during theprocessing that is required to build a multilayer integrated circuit.Even if gross delamination does not occur, these gold contacts areplagued by non-reproducible contact resistances which may also resultfrom a lack of integrity at the gold to Hg_(1-x) Cd_(x) Te interface.Platinum, germanium, aluminum and titanium produce rectifying andtherefore highly resistive contacts. Copper is an acceptor in Hg_(1-x)Cd_(x) Te and is known to diffuse quickly at room temperature. Evensmall amounts of copper in contact with Hg_(1-x) Cd_(x) Te have thepotential to raise the acceptor concentration of the entire slice tolevels which will dramatically degrade Metal Insulator Semiconductor(MIS) performance.

High quality films of small-bandgap Hg_(1-x) Cd_(x) Te and HgTe grown bymolecular beam epitaxy (MBE) or metal organic chemical vapor deposition(MOCVD) have been shown

to produce ohmic contacts to p-type Hg_(1-x) Cd_(x) Te, but requireexpensive and complex deposition equipment and deposition temperatureswhich are problematically high compared to Hg_(1-x) Cd_(x) Te processingtemperatures. Selective area deposition by MBE or MOCVD on Hg_(1-x)Cd_(x) Te is difficult if not impossible.

HgTe contacts formed using thermal evaporation of HgTe onto a 5° C.substrate requires considerable thermal annealing to become ohmic anddoes not achieve specific contact resistances as low as tin contacts.

A long felt need therefore continues to exist for an improved contact toa p-type semiconductor material containing mercury.

SUMMARY OF THE INVENTION

According to the invention, an adhesive ohmic contact is made to ap-type semiconductor material that contains mercury, and includeselements exhibiting the chemical behavior and properties of group IIelements and group VI elements. The contact contains tin.

The contact may be prepared by depositing a passivation layer upon aface of the p-type semiconductor material that contains mercury. Aphotoresist layer is formed over the passivation layer. The photoresistlayer is patterned and a wet etch such as HCl forms an anisotropic viathrough the passivation layer to the face of the semiconductor material.This wet etch is followed by a 5% nitric acid dip to clean the surfaceof the semiconductor material of any residual oxide.

Tin is then deposited on the exposed surface of the semiconductormaterial followed by deposit of a cap containing TiO_(x) N_(y). Next,the metal and photoresist not protected by the cap are lifted and aninsulating layer is formed on all top and exterior lateral surfaces. Theinsulating layer is then etched to the tin film to form a via havingexterior lateral margins. Finally, a metal is inserted to form a contactbuss to the diode contact.

Somewhat desirable results have also been obtained by a similar processwhich replaced the HCl etch and nitric acid dip with a 1/8% bromine inmethanol solution wet etch followed by a sulfuric acid dip.Additionally, lead may be substituted for tin in the present invention.

An integrated circuit is formed on a semiconductor substrate ofsemiconductor material containing mercury and containing a plurality ofp-type areas formed on the semiconductor material. Each p-type area hasa conductive ohmic adhesive contact.

The technical advantages of the present invention include the following:

1. The equipment required to produce tin contacts to p-type Hg_(1-x)Cd_(x) Te is relatively simple and inexpensive when compared to MBE orMOCVD reactors.

2. The process is compatible with Hg_(1-x) Cd_(x) Te device processingtemperatures and allows selected area deposition using standardphotolithographic techniques.

3. The contacts are ohmic after a low temperature anneal but are stableup to at least 150° C.

4. Adhesion of the tin to the Hg_(1-x) Cd_(x) Te and of tin to ZnS (thegate dielectric for MIS devices) and of ZnS to tin is excellent.

5. Tin is also a good ohmic contact to ion implanted Hg_(1-x) Cd_(x) Tewhich allows a single tin film to serve both as a substrate contact andn on p diode contact.

An important aspect of this invention is that the capacitance of MISdevices with tin substrate contacts is virtually independent offrequency which indicates excellent substrate contact. The capacitancevaries by no more than 1.5% from 4 kHz to 1 MHz.

BRIEF DESCRIPTION OF THE DRAWINGS

Other aspects of the invention and their advantages will be discernedwhen one refers to the following detailed description as taken inconjunction with the drawings, in which:

FIGS. 1, 2, 3, 4, 5 and 6 are greatly enlarged schematic elevationalsectional views of a p-type Hg_(1-x) Cd_(x) Te semiconductor layershowing progressive stages in the fabrication of an adhesive ohmiccontact according to the invention;

FIG. 7 is a chart depicting the measured resistance as a function oftransmission line spacing for tin contacts on five micron, p-typeHg_(1-x) Cd_(x) Te;

FIG. 8 is a chart depicting the specific contact resistance of tincontacts to five micron, p-type HgCdTe as a function of annealconditions; and

FIG. 9 is a schematic functional block diagram of a transistor for whichthe invention may be used.

DETAILED DESCRIPTION OF THE INVENTION

The preferred embodiment of the present invention is best understood byreferring to FIGS. 1 through 9 of the drawings, like numerals being usedfor like and corresponding parts of the various drawings.

FIGS. 1 through 6 are greatly enlarged schematic elevational sectionalviews of progressive stages a fabrication process according to of theinvention. Referring first to FIG. 1, a p-type semiconductor materialsubstrate or layer 10 containing mercury is provided, such as Hg_(1-x)Cd_(x) Te. While the invention is described in conjunction with Hg_(1-x)Cd_(x) Te semiconductors, it has application to any ternary orquaternary semiconductor containing mercury. For example, othersemiconductor compounds containing mercury may be used, such as Hg_(1-x)Zn_(x) Te, Hg_(1-x) Cd_(x) Se and Hg_(1-x) Zn_(x) Se. Additionally,elements exhibiting group II or group VI chemical behavior andproperties may be used. For example, manganese, which possesses chemicalproperties similar to group II elements, may be substituted for cadmium,yielding Hg_(1-x) Mn_(x) Te and Hg_(1-x) Mn_(x) Se. Further, the mercuryvalue in these compounds may vary stoichiometrically from near zero tonear one. For infrared sensor applications, mercury x values will rangefrom 0.3 to 0.4. A passivation layer 12 is deposited over layer 10 byany well known means approximately 2000 Å thick. The passivation layermay be zinc sulfide, cadmium telluride, silicon nitride or another layerknown in the literature to be suitable for passivating Hg_(1-x) Cd_(x)Te. A photoresist layer 14 is then deposited over the passivation layer12. Xylene or another photoresist solvent is selectively applied tophotoresist layer 14 to form photoresist pattern 16 shown in FIG. 2.

Turning next to FIG. 3, the photoresist patterning is followed by an HCl(50% to 75% concentration depending on the thickness of the passivationlayer 12) wet etch to remove the zinc sulfide. The HCl etch isisotropic, leaving sides 18 of via 20 very rough with some undercut. TheHCl etch is water rinsed and then followed immediately by a 5% nitricacid cleaning (nitric dip) of the surface 22 to remove any residualoxide from the surface 22. This cleaning step is important to assurecontinuity of the tin film deposited thereafter. Evaporated tin onHg_(1-x) Cd_(x) Te which has had the native oxide stripped with nitricor lactic acid forms a smooth specular film.

FIG. 4 depicts the deposit of a tin film 24 of approximately 2000 Åthick to form an ohmic contact on the surface 22. Additionally, metalfilm is also deposited (not shown) on surface 26 of the photoresistpattern 16. Sputtered or evaporated tin may be successfully used for themetal film 24. The tin will nucleate preferentially on the exposedsurface of HgCdTe layer 10 and will not adhere to the sidewalls of zincsulfide layer 12. Lead and mixtures of tin and lead may also be used formetal film 24.

Referring next to FIG. 5, it will sometimes happen that a gap 28 willappear between the sidewall of the zinc sulfide layer 18 and the surface29 of the tin contact 24, exposing areas of the semiconductor 10. Inorder to minimize any problem gap 28, a cap layer 30 is applied overmetal film 24. The cap layer could comprise TiO_(x) N_(y). The value ofx and y may range stoichiometrically from 0.1 to 0.4, and from 0.9 to0.6, respectively. Preferably x is approximately 0.3 and y isapproximately 0.7. Next, photoresist layer 14 and the tin depositedthereon is lifted, leaving metal film 24 as capped by cap layer 30.

FIG. 6 illustrates the next step of depositing another zinc sulfideinsulating layer 32 followed by defining and forming a via 34 havingsidewalls spaced interiorly from any gap 28. Finally, to make a contact50, a metal 36 is deposited inside via 34. The metal 36 could compriseindium or an In/Pb alloy.

A similar process may also be used which substitutes, for the HCl wetetch, a wet etch of the zinc sulfide using a 1/8% bromine in methanolsolution, followed by a sulfuric acid etch. A tin film having thicknessof approximately 2000 Å is then precipitated from evaporated tin ontothe Hg_(1-x) Cd_(x) Te surface to complete the contact.

According to the invention, these contacts are ohmic with a 77K specificcontact resistance of 0.02 ohm-cm or less after an overnight anneal at100° C.

EXAMPLE I

Tin contacts are suitable as low-resistance, low-noise, reliable andmanufacturable ohmic contacts to p-type Hg_(1-x) Cd_(x) Te. Atransmission line test structure was formed which had five 5×40 millines separated by 1, 2, 3 and 4 mils. Except where noted, the Hg_(1-x)Cd_(x) Te used in these experiments was grown by LPE and had a fivemicron cutoff wavelength and carrier concentrations in the mid 10¹⁴ tomid 10¹⁵ cm⁻³. The surface of the Hg_(1-x) Cd_(x) Te was passivated andblanket coated with a ZnS dielectric which produced a positive flatbandcondition and thus controlled surface currents. Vias for transmissionlines were then opened in the ZnS using a photoresist mask and sulfuricacid etch. The exposed Hg_(1-x) Cd_(x) Te surface then got varioustreatments followed by the deposition of the contact material beinginvestigated. Hg_(1-x) Cd_(x) Te surface treatments included, but werenot limited to: 1/16% bromine in methanol etch; oxygen plasma ash;oxygen plasma ash followed by a nitric or lactic acid etch; vacuumanneal, air anneal and combinations of the above.

The contact materials investigated included but were not limited to:electroless gold, evaporated gold, evaporated HgTe, evaporated telluriumand evaporated tin. Bond metal was then deposited over the contactmaterial and the devices were tested by measuring the 77K current versusvoltage curves by the four point probe method.

The electroless gold contacts which survived processing were rectifyingand highly resistive as processed. After annealing at 100° C. overnight,and at 120° C. for one hour, the gold contacts became ohmic with 77Kspecific contact resistances between 1 and 0.01 ohm-cm². However, theelectroless gold to Hg_(1-x) Cd_(x) Te bond was shown to be a weak oneand many of these devices did not survive processing.

This is consistent with the adhesion problems and non-reproducibility ofthe electroless gold contacts currently used for substrate contacts top-type Hg_(1-x) Cd_(x) Te devices.

The HgTe contacts were rectifying and highly resistive as processed aswell as after extended 100° C. bakes. After annealing at 140° C. for onehour the HgTe contacts became ohmic with 77K specific contactresistances between 0.5 and 0.01 ohm-cm². No adhesion problems wereexperienced with the HgTe contacts. Tin contacts were ohmic as processedor became ohmic with 77K specific contact resistances of 0.02 ohm-cm² orless after an overnight bake at 100° C. FIG. 7 shows the measuredresistance as a function of line separation for tin contacts on 5 micronp-type Hg_(1-x) Cd_(x) Te. ("5-micron" being indicative of theapproximate wavelength to which the device will be sensitive.) Thespecific contact resistance of these tin contacts as a function of baketemperature is shown in FIG. 8. Tin contacts on 10 micron p-typeHg_(1-x) Cd_(x) Te with carrier concentrations in the mid 10¹⁴ cm⁻³ wereshown to have specific contact resistance of 0.01 ohm-cm or less at 77K.

EXAMPLE II

Tin contacts were deposited on actual MIS devices built on 5 micronp-type Hg_(1-x) Cd_(x) Te with carrier concentrations in the mid 10¹⁴cm⁻³. The capacitance of these devices was virtually independent offrequency which indicates excellent substrate contact. The capacitancevaries by no more than 1.5% from 4 kHz to 1 MHz.

FIG. 9 depicts a transistor formed on p-type material with n-type sourceand drain regions, wherein the p-tank is connected to ground using anadhesive ohmic contact according to the invention.

According to this invention, the use of tin as a contact metal on p-typeHg_(1-x) Cd_(x) Te is applicable to the entire range of x. For x valueslarger than 0.5, ohmic contacts to p-type material are a problem even ata temperature of 300° K. Tin should be an effective contact material forthese short wavelength systems as well as for the 5 micron and largerwavelength systems.

While the preferred embodiment of the invention and their advantageshave been set forth in the above detailed description, the invention isnot limited thereto but only by the scope and spirit of the appendedclaims.

What is claimed is:
 1. An adhesive ohmic tin contact made to a p-typearea of a semiconductor material containing mercury also includingelements exhibiting behavior of group II elements and group VI elements.2. The contact of claim 1, wherein said p-type semiconductor materialhas the formula Hg_(1-x) A_(x) B, wherein A is an element exhibiting thechemical behavior and properties of group II elements, includingcadmium, zinc and manganese, and B is an element exhibiting chemicalbehavior and properties of group VI elements, including tellurium andselenium, wherein x is any real number selected from near zero to nearone.
 3. The contact of claim 1, wherein said p-type semiconductormaterial comprising mercury is Hg_(x) Cd_(1-x) Te, wherein x is any realnumber selected from near zero to near one.
 4. The contact of claim 1,wherein said p-type semiconductor material comprises mercury instoichiometric concentrations of 0.3 to 0.4.
 5. An ohmic contact made toa p-type area of a semiconductor material containing mercury, whereinsaid contact comprises tin.
 6. An ohmic contact made to a p-typesemiconductor material containing mercury, wherein said contactcomprises lead.
 7. An integrated circuit formed on a semiconductorsubstrate of semiconductor material and containing mercury, comprising:aplurality of p-type areas formed at a face of said semiconductormaterial; and a plurality of conductive ohmic adhesive contacts made torespective ones of said p-type areas, wherein said contacts are selectedfrom the group consisting of tin, lead, and mixtures thereof.
 8. Theintegrated circuit of claim 7, wherein the plurality of p-type areasform an image array of p-type and n-type junction diodes.
 9. An adhesiveohmic contact to a p-type intrinsic semiconductor material containingmercury, comprising:a layer of p-type intrinsic semiconductor materialcontaining mercury and having a p-type area; a passivating layer formedon the p-type area; a via opened in the passivating layer to the p-typearea; and a nonrectifying metallic contact formed in the via to adhereto the p-type area, wherein said nonrectifying metallic contact isselected from the group consisting of tin, lead, and mixtures thereof.10. The contact of claim 9, wherein said nonrectifying metallic contactis approximately 2000 Å in thickness.
 11. The contact of claim 9,wherein said semiconductor material comprises elements exhibiting thechemical behavior and properties of group II elements and elementsexhibiting the chemical behavior and properties of group VI elements.12. The contact of claim 11, wherein said semiconductor has a formulaHg_(x) A_(1-x) B, wherein A is selected from the group consisting ofcadmium, zinc and manganese and B is selected from the group consistingof tellurium and selenium, wherein x is a real number in the range ofnear one to near zero.
 13. The contact of claim 9, wherein saidpassivating layer is zinc sulfide.
 14. The contact of claim 9, whereinsaid via has sidewalls and said nonrectifying metallic contact has anexterior surface opposed to said face, the exterior surface having alateral peripheral margin on the face, a cap layer deposited in said viato cover said exterior surface and to cover any gap between said lateralperipheral margin and said sidewalls of said via, such that said face ofsaid semiconductor is sealed; anda second passivating layer deposited insaid via and over said cap layer, a second via formed within said viaand having sidewalls disposed laterally inwardly of the sidewalls ofsaid via, said via formed to expose an area of said exterior surface ofsaid contact within said lateral peripheral margin thereof.
 15. Thecontact of claim 14, wherein said cap layer is TiO_(x) N_(y), x being areal number in the range of 0.1 to 0.4, y being a real number in therange of 0.9 to 0.6.
 16. The contact of claim 14, wherein said secondpassivating layer is zinc sulfide.
 17. The contact of claim 5, whereinsaid contact further comprises lead.
 18. An adhesive ohmic lead contactmade to a p-type area of a semiconductor material containing mercuryalso including elements exhibiting behavior of group II elements andgroup VI elements.
 19. The contact of claim 18, wherein said p-typesemiconductor material has the formula Hg_(1-x) A_(x) B, wherein A is anelement exhibiting the chemical behavior and properties of group IIelements, including cadmium, zinc and manganese, and B is an elementexhibiting chemical behavior and properties of group VI elements,including tellurium and selenium, wherein x is any real number selectedfrom near zero to near one.
 20. The contact of claim 18, wherein saidp-type semiconductor material comprising mercury is Hg_(x) Cd_(1-x) Te,wherein x is any real number selected from near zero to near one. 21.The contact of claim 18, wherein said p-type semiconductor materialcomprises mercury in stoichiometric concentrations of 0.3 to 0.4.